Coulomb drag as a probe of the nature of compressible states in a magnetic fieldMURAKI, K; LOK, J. G. S; KRAUS, S et al.Physical review letters. 2004, Vol 92, Num 24, pp 246801.1-246801.4, issn 0031-9007Article

Terahertz electron distribution modulation in piezoelectric In_xGa_1-xN/GaN multiple quantum wells using coherent acoustic nanowavesLIN, Kung-Hsuan; CHERN, Gia-Wei; HUANG, Yue-Kai et al.Physical review B. Condensed matter and materials physics. 2004, Vol 70, Num 7, pp 073307.1-073307.4, issn 1098-0121Article

Transverse negative magnetoresistance of two-dimensional structures in the presence of a strong in-plane magnetic field: Weak localization as a probe of interface roughnessMINKOV, G. M; RUT, O. E; GERMANENKO, A. V et al.Physical review B. Condensed matter and materials physics. 2004, Vol 70, Num 3, pp 035304.1-035304.8, issn 1098-0121Article

Detailed investigation of electron transport, capture and gain in Al_0.3Ga_0.7As/GaAs quantum well infrared photodetectorsCELLEK, O. O; BESIKCI, C.Semiconductor science and technology. 2004, Vol 19, Num 2, pp 183-190, issn 0268-1242, 8 p.Article

Spin and interaction effects in Shubnikov-de Haas oscillations and the quantum Hall effect in GaN/AlGaN heterostructuresKNAP, W; FAL'KO, V. I; LESZCZYNSKI, M et al.Journal of physics. Condensed matter (Print). 2004, Vol 16, Num 20, pp 3421-3432, issn 0953-8984, 12 p.Article

Excitonic enhancement of spin relaxation in diluted magnetic semiconductor quantum wellsSMITS, C. J. P; VAN DRIEL, S. C. A; VAN KAMPEN, M et al.Physical review B. Condensed matter and materials physics. 2004, Vol 70, Num 11, pp 115307.1-115307.8, issn 1098-0121Article

Multiband k.p theory of carrier escape from quantum wellsNIKOLAEV, V. V; AVRUTIN, E. A.Physical review B. Condensed matter and materials physics. 2004, Vol 70, Num 12, pp 125319.1-125319.9, issn 1098-0121Article

Capacitance-voltage spectroscopy of In_0.5Ga_0.5As self-assembled quantum dots in double quantum wells under selective photo-excitationLI, G. R; ZHENG, H. Z; YANG, F. H et al.Semiconductor science and technology. 2003, Vol 18, Num 8, pp 760-762, issn 0268-1242, 3 p.Article

Nonequilibrium DC and photon-assisted interlayer tunneling in a bi-layer tunneling structureLYO, S. K; SIMMONS, J. A.Physica. B, Condensed matter. 2002, Vol 314, Num 1-4, pp 417-421, issn 0921-4526Conference Paper

Photocarrier transport and recombination in an asymmetric quantum well subjected to a focused excitationSAKAI, J. W. L; MORAIS, P. C.Solid state communications. 2001, Vol 120, Num 2-3, pp 89-93, issn 0038-1098Article

The dependence of the carrier density and the mobility on the spacer-layer thickness in modulation-doped Al_xGa_1-xAs/In_yGa_1-yAs/GaAs asymmetric single quantum wellsJUNG, M; KIM, T. W; LEE, D. U et al.Applied surface science. 2001, Vol 177, Num 1-2, pp 1-7, issn 0169-4332Article

Magnetically tuned resonant photon-assisted tunnelingWEIRA, G. S; VILLAS-BOAS, J. M; GUIMARAES, P. S. S et al.Physical review B. Condensed matter and materials physics. 2004, Vol 70, Num 3, pp 035316.1-035316.6, issn 1098-0121Article

Interface roughness scattering limited mobility in AlAs/GaAs, Al_0.3Ga_0.7As/ GaAs and Ga_0.5In_0.5P/GaAs quantum wellsNAG, B. R.Semiconductor science and technology. 2004, Vol 19, Num 2, pp 162-166, issn 0268-1242, 5 p.Article

Current heating of a magnetic two-dimensional electron gas in Hg_1-xMn_xTe/Hg_0.3Cd_0.7Te quantum wellsGUI, Y. S; BECKER, C. R; LIU, J et al.Physical review B. Condensed matter and materials physics. 2004, Vol 70, Num 19, pp 195328.1-195328.4, issn 1098-0121, 1Article

The tri-methyl-Sb flow and the surfactant time effect on InGaAsN/GaAs-strained MQWs grown by MOCVDKIM, T. S; PARK, J. Y; CUONG, T. V et al.Journal of crystal growth. 2004, Vol 270, Num 3-4, pp 340-345, issn 0022-0248, 6 p.Article

Giant polarized optical properties in type-II ZnTe/CdSe multiple quantum wells induced by interface chemical bondsCHEN, Y. F; SU, W. S; YA, M. H et al.Physica status solidi. B. Basic research. 2004, Vol 241, Num 3, pp 538-541, issn 0370-1972, 4 p.Conference Paper

Tunneling photoconductivity computations of multi-quantum well p-i (nano)-n photovoltaic nanostructures by means of the causal Green's functionVARONIDES, A. C.Thin solid films. 2004, Vol 451-52, pp 393-396, issn 0040-6090, 4 p.Conference Paper

Anomalous I versus V characteristics of InGaAs/InAlAs strained multiple quantum well structures for amplitude modulatorsPIRES, M. P; GUASTAVINO, F; YAVICH, B et al.Semiconductor science and technology. 2003, Vol 18, Num 8, pp 729-732, issn 0268-1242, 4 p.Article

Density matrix theory of population inversion in biased semiconductor superlatticesKLEINERT, P; BRYKSIN, V. V.The European physical journal. B, Condensed matter physics. 2003, Vol 31, Num 4, pp 489-494, issn 1434-6028, 6 p.Article

Parallel magnetic field induced strong negative magnetoresistance in a wide p-Ge1-xSix/Ge/p-Ge1-xSix quantum wellYAKUNIN, M. V; ALSHANSKII, G. A; ARAPOV, Yu. G et al.SPIE proceedings series. 2003, pp 190-193, isbn 0-8194-4824-9, 4 p.Conference Paper

Gain, differential gain and linewidth enhancement factor of GaInNAs/GaAs strained quantum well lasers : Special section containing articles on galium nitride and related materialsALEXANDROPOULOS, Dimitris; ADAMS, Mike J.Journal of physics. Condensed matter (Print). 2002, Vol 14, Num 13, pp 3523-3536, issn 0953-8984Article

Microstructural, magnetotransport, and electronic subband studies of InAs_xP_1-x/InP modulation-doped strained single quantum wellsKIM, T. W; CHOO, D. C; LEE, D. U et al.The Journal of physics and chemistry of solids. 2002, Vol 63, Num 5, pp 875-879, issn 0022-3697Article

The effect of anisotropy on resonant tunnelling spin polarization in type-II heterostructuresBOTHA, A. E; SINGH, M. R.Physica status solidi. B. Basic research. 2002, Vol 231, Num 2, pp 437-445, issn 0370-1972Article

Effects of piezoelectric field, bias and indium fluctuations on a InGaN-GaN single quantum well systemORIATO, D; WALKER, Alison B.Physica. B, Condensed matter. 2002, Vol 314, Num 1-4, pp 59-62, issn 0921-4526Conference Paper

Strong exciton energy blue shift in graded wurtzite and zincblende GaN/Al_0.2Ga_0.8N single quantum wellsCAETANO, E. W. S; FREIRE, V. N; FARIAS, G. A et al.Journal of crystal growth. 2002, Vol 246, Num 3-4, pp 341-346, issn 0022-0248, 6 p.Conference Paper